发明名称 窒化物半導体ウェハ
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element divided so that the resonator end face becomes flat. <P>SOLUTION: When an LD structure 251 is fabricated on a GaNl-based substrate 250, a cleavage introduction groove 252 is provided by scribing the surface of the LD structure 251 with a diamond blade. The cleavage introduction groove 252 is provided between stripe-like optical waveguides 253 provided in parallel with the<1-100>direction of a wafer, and provided in the shape of dashed lines in the<11-20>direction of a wafer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5624166(B2) 申请公布日期 2014.11.12
申请号 JP20130020787 申请日期 2013.02.05
申请人 发明人
分类号 H01S5/02;H01L21/301 主分类号 H01S5/02
代理机构 代理人
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