| 摘要 |
<p>Provided is a semiconductor device which has excellent long-term reliability and has less yield deterioration due to semiconductor element breakage caused by heat application during assembly. The semiconductor device is provided with: a semiconductor substrate; an electrode terminal formed on one surface of the semiconductor substrate; a hole formed on the semiconductor substrate at a position which corresponds to the electrode terminal from at least the surface opposite to the surface having the electrode terminal thereon; a heat transfer body which is embedded in the hole and is composed of a material having a heat conductivity higher than that of the material of the semiconductor substrate; and an IR absorbing film which is formed at least on a part of the heat transfer body surface opposite to the heat transfer body surface on the electrode terminal side and is composed of a material having an infrared ray absorbability higher than that of the material of the semiconductor substrate.</p> |
