| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a miniaturizable infrared radiation element with high-speed response, and energy saving with high infrared radiation efficiency to input energy. <P>SOLUTION: A heat insulating layer 2 and an infrared generation layer 1 are provided on one surface of a monocrystal silicon substrate 3. The infrared generation layer 1 includes a radiation layer 4 for radiating an infrared ray by temperature rise, a transmission layer 5 which is transparent to an infrared ray having an object wavelength, and a reflection layer 6 for reflecting the infrared ray. A current is sent into some of the radiation layer 4, the transmission layer 5 and the reflection layer 6 to generate heat, and a temperature of the radiation layer 4 is raised to radiate an infrared ray. The transmission layer 5 is set to have such a thickness dimension that an optical path length to the infrared ray having the object wavelength is a length in odd-numbered times of a quarter of the wavelength of the infrared ray. The radiation layer 4 transmits the infrared ray from the transmission layer 5. Accordingly, the infrared radiation efficiency to input power is enhanced by using the infrared ray from the transmission layer 5 together with the infrared ray radiated from the infrared generation layer 1. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
