发明名称 PATTERNING METHODS FOR STAIRCASE STRUCTURES AND FABRICATING METHODS FOR SEMICONDUCTOR DEVICES USING THE SAME
摘要 <p>The present invention relates to a patterning method for forming a staircase structure and a manufacturing method of a semiconductor device using the same. The patterning method for forming a staircase structure comprises: forming a photoresist film on a process film; exposing the photoresist film to light by defocusing it; forming an etching mask having a staircase-shaped side surface by developing the exposed and defocused photoresist film; and forming the process film in a staircase structure by patterning the process film through an etching process using the etching mask.</p>
申请公布号 KR20140130918(A) 申请公布日期 2014.11.12
申请号 KR20130049502 申请日期 2013.05.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHUL HO;KIM, CHEOL HONG;PARK, CHO RONG;LEE, JAE HAN
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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