PATTERNING METHODS FOR STAIRCASE STRUCTURES AND FABRICATING METHODS FOR SEMICONDUCTOR DEVICES USING THE SAME
摘要
<p>The present invention relates to a patterning method for forming a staircase structure and a manufacturing method of a semiconductor device using the same. The patterning method for forming a staircase structure comprises: forming a photoresist film on a process film; exposing the photoresist film to light by defocusing it; forming an etching mask having a staircase-shaped side surface by developing the exposed and defocused photoresist film; and forming the process film in a staircase structure by patterning the process film through an etching process using the etching mask.</p>
申请公布号
KR20140130918(A)
申请公布日期
2014.11.12
申请号
KR20130049502
申请日期
2013.05.02
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, CHUL HO;KIM, CHEOL HONG;PARK, CHO RONG;LEE, JAE HAN