| 摘要 |
<p>The present invention relates to a semiconductor device including a transistor in which the deviation in the electrical properties is reduced. The present invention includes the transistor in which a channel is formed on an oxide semiconductor layer. The carrier concentration included in an area formed in the channel of the oxide semiconductor layer is equal to or lower than 1×1015/cm3, desirably equal to or lower than 1×1013/cm3, and more desirably equal to or lower than 1×1011/cm3, so that the height of the energy barrier that electrons must cross over is united in a certain value. By this, the semiconductor device in which the deviation in the electrical properties of the transistors is reduced is provided.</p> |
