| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a processing method of a sapphire substrate capable of dividing a sapphire substrate along a preset division line to have a thickness of 100μm or less without causing any damage. <P>SOLUTION: The processing method of a sapphire substrate where a sapphire substrate is divided along a preset division line includes a cut groove formation step for forming a cut groove becoming an origin of fracture in one side of the sapphire substrate along a scheduled division line by feeding a cutting blade and the sapphire substrate relatively for processing while rotating the cutting blade, a grinding step for grinding the other side of the sapphire substrate subjected to the cut groove formation step to obtain a sapphire substrate having a predetermined thickness, and a fracture step for rupturing the sapphire substrate in which a cut groove is formed along the scheduled division line by imparting an external force to the sapphire substrate subjected to the grinding step. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
