| 摘要 |
A thin film resistance element temperature sensor (10) having a simple configuration, high resistance to contaminants, high durability and high measurement accuracy. The sensor (10) includes a resistance element (12) formed by a platinum thin film on an insulating substrate (14), and a barrier layer (20) consisting of crystallized glass which covers the resistance element (12). The sensor (10) a protective film (22) which covers the barrier layer (20), and electrode pads (16) stacked on connecting ends (12a) at both ends of the resistance element (12). The barrier layer (20) consists of crystallized glass in which Al 2 O 3 exists at a blending ratio of 35% by mass or greater, SiO 2 exists at a blending ratio of 10% by mass or greater to 25% by mass or less, and the blending ratio Al 2 O 3 is greater than that of CaO or SrO. The barrier layer (20) is stacked to cover the resistance element (12) and a part of the electrode pads (16) on the side of the resistance element (12). The protective film (22) consists of Si-Ba-Al-Zr based glass ceramic and covers the barrier layer (20), electrode pads (16) and base ends of lead terminals (18) connected to the electrode pads (16). |
