SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a semiconductor device to improve the capacity and reliability of a capacitor by preventing damage to oxygen atoms in a dielectric layer using interface treatment technology between the dielectric layer and an electrode. The semiconductor device comprises a first conductor; an oxide dielectric layer formed on the first conductor; an interface layer which is formed on the oxide dielectric layer, has a first formation enthalpy, and supplies oxygen; and a second conductor which is formed on the interface layer to touch the interface layer and has a second formation enthalpy which is higher than the first formation enthalpy.