| 摘要 |
<p>The present invention relates to a substrate processing apparatus and, more specifically, to a substrate processing apparatus using plasma. The substrate processing apparatus according to an embodiment of the present invention includes: a chamber which has a processing space inside; a substrate supporting unit which is positioned in the chamber and supports a substrate; a gas supply unit which supplies process gas to the inside of the chamber; a power supply unit which applies power on the inside of the chamber; and a controller which controls the gas supply unit and the power supply unit. The power supply unit includes an impedance matching device including a power supply and one or more variable elements. The controller controls the size of the variable elements based on the change of the flow rate of process gas provided for the inside of the chamber.</p> |
