| 摘要 |
<p>#CMT# #/CMT# A top electrically conductive layer and a bottom electrically conductive layer (22) are deposited on the top and bottom of a silicon (Si) wafer (21). The wafer is secured to a substrate (23) using an adhesive layer (24). A portion of the conductive layer on top of the silicon wafer is removed and the wafer is etched towards the bottom conductive layer in the shape of the top conductive layer removal portion for forming a mould cavity (25). #CMT# : #/CMT# Independent claims are included for the following: (1) micromechanical component fabricating method; and (2) mould for fabricating a micromechanical component. #CMT#USE : #/CMT# Mould fabrication method for fabricating micromechanical component e.g. coaxial escape wheel in timepiece. #CMT#ADVANTAGE : #/CMT# The fabrication of component having high slenderness ratio is possible and the splitting caused by internal stresses in the electrodeposited material is avoided by preventing delamination phenomena at the interfaces owing to the use of silicon under the conductive layer. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows the explanatory view of the method of fabricating the micromechanical component. 21 : Wafer 22 : Bottom conductive layer 23 : Substrate 24 : Adhesive layer 25 : Cavity 39' : Mould.</p> |
