发明名称 Spin current generator for STT-MRAM or other spintronics applications
摘要 Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
申请公布号 US8885398(B2) 申请公布日期 2014.11.11
申请号 US201313911917 申请日期 2013.06.06
申请人 Micron Technology, Inc. 发明人 Liu Jun;Sandhu Gurtej
分类号 G11C11/00;G11C11/16;B82Y25/00;G01R33/09;G01R33/12;H01F10/32;B82Y10/00 主分类号 G11C11/00
代理机构 Fletcher Yoder, P.C. 代理人 Fletcher Yoder, P.C.
主权项 1. A device, comprising: an array of memory cells; a spin current generator configured to generate a unidirectional spin programming current through at least one of the memory cells.
地址 Boise ID US