发明名称 |
Spin current generator for STT-MRAM or other spintronics applications |
摘要 |
Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired. |
申请公布号 |
US8885398(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201313911917 |
申请日期 |
2013.06.06 |
申请人 |
Micron Technology, Inc. |
发明人 |
Liu Jun;Sandhu Gurtej |
分类号 |
G11C11/00;G11C11/16;B82Y25/00;G01R33/09;G01R33/12;H01F10/32;B82Y10/00 |
主分类号 |
G11C11/00 |
代理机构 |
Fletcher Yoder, P.C. |
代理人 |
Fletcher Yoder, P.C. |
主权项 |
1. A device, comprising:
an array of memory cells; a spin current generator configured to generate a unidirectional spin programming current through at least one of the memory cells. |
地址 |
Boise ID US |