Continuous mesh three dimensional non-volatile storage with vertical select devices

摘要

A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

主权项

1. A method for operating a non-volatile storage system, comprising:
applying data dependent signals to a plurality of global bit lines; applying address dependent signals to a set of word lines connected to a monolithic three dimensional array of memory elements that form a continuous mesh with the word lines and vertically oriented bit lines, the monolithic three dimensional array of memory elements is positioned above and not in a substrate; applying an enable signal to a first select line to turn on a plurality of vertically oriented select devices that are above and not in the substrate, the vertically oriented select devices are connected to the vertically oriented bit lines and the global bit lines such that turning on the plurality of vertically oriented select devices provides the signals from the global bit lines to the vertically oriented bit lines, the vertically oriented bit lines are above and not in the substrate; and performing one or more memory operations in response to the applying data dependent signals to the plurality of global bit lines, applying address dependent signals to the set of word lines and applying the enable signal to the first select line.