| 发明名称 | Memory element and memory device | ||
| 摘要 | A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | ||
| 申请公布号 | US8885385(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201213487165 | 申请日期 | 2012.06.02 |
| 申请人 | Sony Corporation | 发明人 | Mizuguchi Tetsuya;Yasuda Shuichiro;Shimuta Masayuki;Ohba Kazuhiro;Aratani Katsuhisa |
| 分类号 | G11C11/00;H01L45/00;G11C11/56;H01L27/24 | 主分类号 | G11C11/00 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A memory element, comprising a memory layer disposed between a first electrode and a second electrode, wherein: the memory layer includes an ion source layer containing one or more metallic elements, and one or more chalcogen elements from the group of tellurium (Te), sulfur (S), and selenium (Se), anda resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer; b) the resistance change layer includes a first resistance change layer closer to the first electrode, and a second resistance change layer closer to the ion source layer; and c) the first resistance change layer is an oxide layer. | ||
| 地址 | Tokyo JP | ||