EUV lithography device and method for processing an optical element

摘要

An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

主权项

1. An extreme-ultraviolet (EUV) lithography device comprising:
an illumination device configured to illuminate a mask at an illumination position in the EUV lithography device a projection device configured to image a structure provided on the mask onto a light-sensitive substrate, and a processing device configured to process an optical element at a processing position in the EUV lithography device, the processing device comprising:
a particle generator configured to generate a particle beam,a gas supply device comprising a gas nozzle configured to supply a gas stream to the surface of the optical element and a beam trap for the particle beam arranged within the gas supply device, andan optical unit configured to selectively orient the particle beam onto the beam trap or the gas nozzle by at least one of expanding, focusing and redirecting the particle beam.