Systems and methods for fabricating self-aligned memory cell

摘要

Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-X CaXMnO3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.

主权项

1. A stacked resistive random access memory (RRAM), comprising:
a first metal electrode layer; a first insulator above the first metal electrode layer wherein the first insulator is patterned to expose one or more first metal portions of the first metal electrode layer; a first Pr1-x CaxMnO3 (PCMO) layer above the first insulator and the first metal portions, wherein x is between approximately 0.3 and approximately 0.5; a second metal electrode layer; a second insulator located above the second metal electrode layer, wherein the second insulator is patterned to expose one or more second metal portions of the second metal electrode layer; a second Pr1-x CaxMnO3 (PCMO) layer above the second insulator and the second metal portions; and a last metal electrode layer, thus comprising a two-layer, resistive random access memory.