Diffusion barrier layer for group III nitride on silicon substrate

摘要

The present disclosure is directed to an integrated circuit and its formation. In some embodiments, the integrated circuit includes a diffusion barrier layer. The diffusion barrier layer can be arranged to prevent diffusion of the Si and O2 from a Si substrate into a Group III nitride layer. The diffusion barrier layer can comprise Al2O3. In some embodiments, the integrated circuit further comprises a lattice-matching structure disposed between the silicon substrate and a Group III nitride layer.

主权项

1. An integrated circuit comprising:
a silicon substrate having a first lattice structure; a GaN layer disposed over the silicon substrate and having a second lattice structure that differs from the first lattice structure; a lattice-matching structure arranged between the silicon substrate and the GaN layer and arranged to interface the first lattice structure to the second lattice structure; and a diffusion-barrier layer arranged between the silicon substrate and the lattice matching structure, the diffusion-barrier layer configured to limit diffusion of silicon and oxygen from the silicon substrate to the lattice matching structure, wherein the diffusion-barrier layer comprises metal oxide or SixNy.