High-K gate electrode structure formed after transistor fabrication by using a spacer

摘要

During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

主权项

1. A method, comprising:
removing a first gate electrode material from a gate electrode structure of a transistor, said transistor being laterally embedded in a dielectric material; forming a sidewall spacer in an opening formed in said dielectric material by removing said first gate electrode material, wherein forming said sidewall spacer comprises depositing a dielectric material layer after removing said first gate electrode material, depositing a spacer material layer comprising a metal-containing material on said dielectric material layer, and anisotropically etching said spacer material layer while using said dielectric material layer as an etch stop; and forming a second gate electrode material on a high-k dielectric layer formed at least at a bottom of said opening.