| 发明名称 | Guard trench | ||
| 摘要 | A device may comprise a substrate formed of a first semiconductor material, a first trench formed in the substrate, a second trench formed in the substrate proximate the first trench, an oxide layer formed in the first trench and the second trench, and a second semiconductor material formed upon the oxide layer. The oxide layer in the second trench may be adapted to mitigate undercut of the oxide layer in the first trench during an etching process. | ||
| 申请公布号 | US8884381(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201012946495 | 申请日期 | 2010.11.15 |
| 申请人 | DigitalOptics Corporation MEMS | 发明人 | Jain Ankur;Calvet Robert J.;Gutierrez Roman C. |
| 分类号 | H01L27/14 | 主分类号 | H01L27/14 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A device comprising: a substrate formed of a first semiconductor material; a guard trench formed in the substrate; a first trench formed proximate the guard trench and disposed on a first side of the guard trench; an oxide layer formed at least partially in the guard trench, wherein the oxide layer is disposed on two opposing sidewalls of the guard trench and extends continuously from the guard trench to the first trench; and a second semiconductor material formed upon the oxide layer, wherein the oxide layer comprises an undercut on a second side of the guard trench that is opposite the first side. | ||
| 地址 | Arcadia CA US | ||