Method of fabrication of a FinFET element

摘要

The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.

主权项

1. A method of fabricating a FinFET element comprising:
providing a substrate including a first fin and a second fin; forming a first silica glass layer on the first fin, wherein the forming the first silica glass layer includes forming a plasma-enhanced phosphosilicate glass (pe-PSG) layer; forming an oxide layer on the pe-PSG layer and the second fin; providing a dopant of a second type performing a vapor phase diffusion process to diffuse the dopant of the second type into the oxide layer to form a doped layer; and after forming the pe-PSG layer and forming the doped layer, performing high temperature processing of the substrate, wherein the performing high temperature processing of the substrate provides for driving a dopant of the pe-PSG into the first fin and the dopant of the second type into the second fin by a solid phase diffusion process to form channels of transistor devices.