| 发明名称 |
Composition and method for polishing bulk silicon |
| 摘要 |
The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition. |
| 申请公布号 |
US8883034(B2) |
申请公布日期 |
2014.11.11 |
| 申请号 |
US200912462638 |
申请日期 |
2009.09.16 |
| 申请人 |
|
发明人 |
Reiss Brian;Clark John;Jones Lamon;Gilliland Jeffrey;White Michael |
| 分类号 |
C09K13/06;C09K3/14;H01L21/02;C09G1/02 |
主分类号 |
C09K13/06 |
| 代理机构 |
|
代理人 |
Omholt Thomas E;Koszyk Francis J;Hornilla Arlene |
| 主权项 |
1. A chemical-mechanical polishing composition consisting essentially of:
(a) about 0.5 wt. % to about 20 wt. % of silica, (b) about 0.02 wt. % to about 5 wt. % of one or more organic carboxylic acids, (c) about 0.05 wt. % to about 2 wt. % of one or more aminophosphonic acids, (d) about 0.1 wt. % to about 5 wt. % of one or more tetraalkylammonium salts selected from the group consisting of tetraalkylammonium hydroxide, chloride, bromide, sulfate, and hydrogensulfate salts, (e) potassium bicarbonate, (f) optionally potassium hydroxide, and (g) water,wherein the polishing composition has a pH of about 8 to about 11. |
| 地址 |
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