Silicon wafer and method of manufacturing the same

摘要

A silicon wafer in which both occurrences of slip dislocation and warpage are suppressed in device manufacturing processes is a silicon wafer having BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface to a depth of 20 μm and having a diagonal length of 200 nm or more are present at a concentration of ≦2×109/cm3, and BMDs located at a position below a depth ≧50 μm have a diagonal length of ≧10 nm to ≦50 nm and a concentration of ≧1×1012/cm3.

主权项

id="REI-00001" date="20141111" 1. A silicon wafer having a nitrogen concentration which is from ≧5×1014 atoms/cm3 to ≦1×1016 atoms/cm3, a carbon concentration which is from ≧1×1015 atoms/cm3 to ≦8.1×1015 atoms/cm3, and containing BMDs having an octahedral shape, wherein BMDs located at a position below the silicon wafer surface at a depth of less than 20 μm and having a diagonal length of 200 nm or more are present in a concentration of ≦2×109/cm3, and BMDs located at a depth of more than 50 μm from the wafer surface and having a diagonal length of ≧10 nm to ≦50 nm are present in a concentration of ≧1×1012/cm3.id="REI-00001"