发明名称 |
Transistors having features which preclude straight-line lateral conductive paths from a channel region to a source/drain region |
摘要 |
Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations. |
申请公布号 |
US8884368(B1) |
申请公布日期 |
2014.11.11 |
申请号 |
US201313897112 |
申请日期 |
2013.05.17 |
申请人 |
Micron Technology, Inc. |
发明人 |
Smith Michael A. |
分类号 |
H01L29/66;H01L29/78;H01L29/10 |
主分类号 |
H01L29/66 |
代理机构 |
Wells St. John P.S. |
代理人 |
Wells St. John P.S. |
主权项 |
1. A transistor comprising:
a channel region under a gate; a source/drain region laterally spaced from the channel region by an active region; one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region; and wherein the dielectric features are configured as spaced-apart interlocking structures. |
地址 |
Boise ID US |