Substrate processing including correction for deposition location

摘要

Substrate processing including correction for deposition location is described, including a combinatorial processing chamber that incorporates the correction. The combinatorial processing chamber can be used to process multiple regions of a substrate using different processing parameters on different regions. For example, one region can have one material deposited on it and another region can have a different material deposited on it, although other combinations and variations are possible. The combinatorial processing chamber uses a rotating and revolving substrate pedestal to be able to deposit on all locations or positions on a substrate. The combinatorial processing chamber uses a correction factor that accounts for variations in alignment and/or configuration of the processing chamber so that the actual location of deposition of a region is approximately the same as a desired location of deposition.

主权项

1. An apparatus comprising:
a substrate pedestal configured to hold a substrate and rotate the substrate about a first axis; a plurality of deposition guns positioned above the substrate pedestal and configured to deposit at least one material on the substrate; a processing aperture between the substrate pedestal and the plurality of deposition guns and configured to revolve relative to the substrate pedestal around a second axis,
wherein the second axis is offset from the first axis,wherein the processing aperture is further configured such that only one region of a plurality of regions of the substrate is exposed to the plurality of deposition guns; and a controller configured to:
receive a location of the one region of the plurality of regions;control the rotation of the substrate pedestal and the revolution of the processing aperture such that the one region of the plurality of regions is exposed to the plurality of deposition guns; andapply a correction factor to a position of the aperture relative to the one region of the plurality of regions that accounts for offsets of the first axis, the second axis, and a center of the substrate wherein the offsets comprise:
a first offset between the first axis and the center of the substrate;a second offset between an actual position of the aperture and a desired position of the aperture; anda third offset between an actual position of the second axis and a desired position of the second axis.