Memory device and method for manufacturing the same

摘要

According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a memory region; and a conductive region. The transistor controls a conduction of each of a current in a first direction flowing between the first line and the second line and a current in a second direction opposite to the first direction. The memory region has a first magnetic tunnel junction element which is connected between the first line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction. The conductive region is connected between the second line and the other end of the transistor.

主权项

1. A memory device comprising:
a first signal line; a second signal line; a transistor configured to control a conduction of each of a current in a first direction flowing between the first signal line and the second signal line and a current in a second direction opposite to the first direction; a memory region having a first magnetic tunnel junction element which is connected between the first signal line and one end of the transistor, a magnetization direction of which becomes parallel when a current not less than a first parallel threshold value flows in the first direction, and the magnetization direction of which becomes antiparallel when a current not less than a first antiparallel threshold value flows in the second direction; and a conductive region connected between the second signal line and the other end of the transistor.