Circuitry component and method for forming the same

摘要

A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.

主权项

1. A circuit component comprising:
a semiconductor substrate; multiple transistors on said semiconductor substrate; a first dielectric layer coupled to said semiconductor substrate; a conductive structure coupled to said first dielectric layer, wherein said conductive structure comprises a first circuit layer and a second circuit layer coupled to said first circuit layer; a second dielectric layer between said first and second circuit layers; an insulating layer coupled to said conductive structure and coupled to said first and second dielectric layers, wherein said insulating layer comprises a nitride layer, wherein a first opening in said insulating layer exposes a contact point of said conductive structure; a first conductive layer on said contact point and coupled to said insulating layer, wherein said first conductive layer is coupled to said contact point through said first opening, wherein said first conductive layer having a thickness between 2 and 30 micrometers and coupled to said contact point and coupled to said insulating layer; a first conductive post on said first conductive layer, wherein said first conductive post contacts said first conductive layer, wherein said first conductive post is coupled to to said contact point through said first conductive layer; a first polymer material on said first conductive layer and coupled to said insulating layer, wherein said first polymer material contacts a sidewall of said first conductive post, wherein said first polymer material has a first surface at a same level as a second surface of said first conductive post; a second polymer material on said first polymer material, wherein an opening in said second polymer material exposes said second surface of said first conductive post; a second conductive layer coupled to said second surface of said first conductive post and within said opening that exposes said second surface of said first conductive post; and a tin-containing solder on said second conductive layer, wherein said tin-containing solder is connected to said second conductive layer and is connected to said first conductive layer through said first conductive post, at least a portion of said tin-containing solder being within said opening that exposes said second surface of said first conductive post.