| 发明名称 | Light emitting device | ||
| 摘要 | A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor layer; and a connection member having one end making contact with the first semiconductor layer and the other end making contact with the second semiconductor layer to form a schottky contact with respect to one of the first and second semiconductor layers. | ||
| 申请公布号 | US8884336(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201213625567 | 申请日期 | 2012.09.24 |
| 申请人 | LG Innotek Co., Ltd. | 发明人 | Jeong Hwan Hee |
| 分类号 | H01L31/072;H01L31/109;H01L31/0328;H01L31/0336;H01L27/15;H01L33/38 | 主分类号 | H01L31/072 |
| 代理机构 | KED & Associates LLP | 代理人 | KED & Associates LLP |
| 主权项 | 1. A light emitting device, comprising: a first electrode; a light emitting structure including a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; a second electrode on the second semiconductor layer; a connection layer having first to third portions; and an insulating layer between the connection layer and the light emitting structure, wherein the first portion contacts the first semiconductor layer, the second portion contacts the second semiconductor layer, and the third portion contacts the insulating layer. | ||
| 地址 | Seoul KR | ||