Phase change memory apparatus and fabrication method thereof

摘要

A phase change memory apparatus is provided that includes a first electrode that is longer than it is wide, the first electrode having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode.

主权项

1. A method of manufacturing a phase change memory apparatus, comprising:
forming a selective epitaxial growth layer on an active region of a semiconductor substrate; forming a trench in the selective epitaxial growth layer; forming an electrode having an opposite conductivity to the selective epitaxial growth layer in a portion of the trench in order to form a diode by the selective epitaxial growth layer and the electrode; and forming a contact hole in the selective epitaxial growth layer to expose a portion of the active region; forming an ionization layer on a side wall of the contact hole; and forming a word line contact within the contact hole forming an electrode contact on the electrode, wherein the electrode contact is formed on the electrode to a determined height within the trench.