发明名称 |
Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure |
摘要 |
The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy. |
申请公布号 |
US8883547(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201013500183 |
申请日期 |
2010.10.06 |
申请人 |
NEXCIS |
发明人 |
Grand Pierre-Philippe;Jaime Salvador;Broussillou Cedric |
分类号 |
H01L21/00;H01L31/18;H01L31/032 |
主分类号 |
H01L21/00 |
代理机构 |
Frost Brown Todd LLC |
代理人 |
Frost Brown Todd LLC |
主权项 |
1. Method for producing a thin film having photovoltaic properties, based on a I-III-VI2 alloy and deposited by electrolysis, said method comprising at least the steps of:
a) successively depositing layers of metal elements I and III, b) and applying a thermal post-treatment with an addition of element VI, wherein step a) comprises the following operations: a1) depositing a multilayer structure comprising at least:
two layers of element I andtwo layers of element III, in at least one alternating sequence of the layers I/III/I/III or III/I/III/I, and a2) annealing this structure before adding element VI to obtain a layer of I-III alloy. |
地址 |
Rousset FR |