Semiconductor devices including dual gate electrode structures and related methods

摘要

A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the control gate structure may include a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region. Moreover, the first and second gate electrodes may be electrically isolated. Related devices, structures, methods of operation, and methods of fabrication are also discussed.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including first and second spaced apart source/drain regions defining a channel region therebetween; a control gate structure on the channel region between the first and second spaced apart source/drain regions, wherein the control gate structure includes a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region, wherein the first and second gate electrodes are electrically isolated; a bit line coupled to the first source/drain region; and a memory storage element coupled to the second source/drain region.