Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process

摘要

A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced total power level of the ion source is designed to reduce the ionization efficiency of the enriched dopant gas compared to that of its corresponding non-enriched or lesser enriched dopant gas. The temperature of the source filament is also reduced, thereby mitigating the adverse effects of fluorine etching and ion source shorting when a fluorine-containing enriched dopant gas is utilized. The reduced levels of total power in combination with a lower ionization efficiency and lower ion source temperature can interact synergistically to improve and extend ion source life, while beneficially maintaining a beam current that does not unacceptably deviate from previously qualified levels.

主权项

1. A method of using an enriched dopant gas, comprising:
introducing the enriched dopant gas at a flow rate sufficient to maintain stability of the ion source, wherein the enriched dopant gas has an enrichment level in an isotope therein of 90% or greater than natural abundance levels; operating at a reduced total power level of the ion source in comparison to a total power level utilized for a correspondingly lesser enriched or non-enriched dopant gas; and ionizing the enriched dopant gas to generate and maintain a beam current as produced using the correspondingly lesser enriched or non-enriched dopant gas at the flow rate.