Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same

摘要

In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

主权项

1. A method, comprising:
smoothing a surface of a dielectric buffer layer; forming multiple layers of a thin film multi-level capacitor over the dielectric buffer layer, the forming of the multiple layers including providing high permittivity dielectric layers interleaved between electrode layers to form multiple capacitors stacked on each other, wherein pairs of the multiple capacitors share a common electrode therebetween, and wherein a bottom electrode of a bottom capacitor of the multiple capacitors is formed directly on the dielectric buffer layer; annealing each capacitor layer before forming a successive capacitor layer; forming a high density interconnect layer, wherein the dielectric buffer layer provides electrical isolation between the high density interconnect layer and the thin film multi-level capacitor; and forming a contact via through the dielectric buffer layer and the high density interconnect layer to provide electrical contact for the thin film multi-level capacitor.