Film deposition apparatus, film deposition method, and computer readable storage medium

摘要

In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

主权项

1. A film deposition apparatus comprising:
a table that has a substrate receiving area on which a substrate is placed, the table being provided in a vacuum chamber; a first reaction gas supplying portion that supplies a first reaction gas to be adsorbed on an upper surface of the substrate to the substrate receiving area; a second reaction gas supplying portion that supplies a second reaction gas that reacts with the first reaction gas adsorbed on the upper surface of the substrate to form a reaction product to the substrate receiving area; a plasma generation portion that activates an alteration gas into plasma so that an alteration process is carried out with respect to the reaction product on the substrate with the activated alteration gas; a rotation mechanism that rotates the table relative to the first reaction gas supplying portion, the second reaction gas supplying portion, and the plasma generation portion; and a control portion that outputs a control signal so that the film deposition apparatus is caused to perform at least once; wherein the control portion outputs the control signal to the first reaction gas supplying portion, the second reaction gas supplying portion and further to the plasma generation portion to control a first nozzle of the first reaction gas supplying portion, a second nozzle of the second reaction gas supplying portion and an activated gas injector of the plasma generation portion such that the first reaction gas and the second reaction gas are alternatively supplied to the substrate respectively via the first and second gas nozzles that is then exposed to the alteration gas activated by the plasma and supplied via the activated gas injector, wherein the control portion further outputs the control signal to the first reaction gas supplying portion, the second reaction gas supplying portion and further to the plasma generation portion to control the first nozzle of the first reaction gas supplying portion, the second nozzle of the second reaction gas supplying portion and the activated gas injector of the plasma generation portion such that the alteration gas activated by the plasma is supplied to the substrate via the activated gas injector in a state in which the first reaction gas is not supplied, and wherein the control portion controls the first reaction gas supplying portion, the second reaction gas supplying portion and the plasma generation portion to perform a film deposition-alteration step by outputting the control signal to the first reaction gas supplying portion, the second reaction gas supplying portion and further to the plasma generation portion to control the first nozzle of the first reaction gas supplying portion, the second nozzle of the second reaction gas supplying portion and the activated gas injector of the plasma generation portion such that the first reaction gas and the second reaction gas are alternatively supplied to the substrate respectively via the first and second gas nozzles and such that the substrate is then exposed to the alteration gas activated by the plasma and supplied via the activated gas injector, and wherein the control portion further controls the first reaction gas supplying portion, the second reaction gas supplying portion and the plasma generation portion to perform an alteration step by outputting the control signal to the first reaction gas supplying portion, the second reaction gas supplying portion and further to the plasma generation portion to control the first nozzle of the first reaction gas supplying portion, the second nozzle of the second reaction gas supplying portion and the activated gas injector of the plasma generation portion such that the alteration gas activated by the plasma is supplied to the substrate via the activated gas injector in a state in which the first reaction gas is not supplied via the first gas nozzle, the control portion allows the second reaction gas to be supplied to the vacuum chamber via the second gas nozzle at the same flow rate between the film deposition-alteration step and the alteration step, in order to maintain the inside of the vacuum chamber at substantially an equal pressure between the film deposition-alteration step and the alteration step.