发明名称 Impedance matching apparatus
摘要 Provided is an impedance matching apparatus for matching impedance to a plasma load. The impedance matching apparatus includes a first frequency impedance matching circuit unit that transfers an output of a first frequency RF power source unit, operating at a first frequency, to the plasma load; and a second frequency impedance matching circuit unit that transfers an output of a second frequency RF power source unit, operating at a second frequency higher than the first frequency, to the plasma load. The first frequency impedance matching circuit unit includes a T-type matching circuit, and the second frequency impedance matching circuit unit includes a standard L-type matching circuit or Π-type matching circuit.
申请公布号 US8884520(B2) 申请公布日期 2014.11.11
申请号 US201213571167 申请日期 2012.08.09
申请人 Plasmart Inc. 发明人 Kim Jae Hyun;Lee Sang Won;Lee Yong Gwan
分类号 H01J19/78;H05H1/46;H03H7/40;H01J37/32 主分类号 H01J19/78
代理机构 Jenkins, Wilson, Taylor & Hunt, P.A. 代理人 Jenkins, Wilson, Taylor & Hunt, P.A.
主权项 1. An impedance matching apparatus for matching impedance to a plasma load, comprising: a first frequency impedance matching circuit unit configured to transfer an output of a first frequency RF power source unit, operating at a first frequency, to the plasma load; and a second frequency impedance matching circuit unit configured to transfer an output of a second frequency RF power source unit, operating at a second frequency higher than the first frequency, to the plasma load, wherein the first frequency impedance matching circuit unit includes a T-type matching circuit, and the second frequency impedance matching circuit unit includes a standard L-type matching circuit or a Π-type matching circuit, and wherein the first frequency impedance matching circuit unit further includes a first frequency output filter unit disposed between the T-type matching circuit and the plasma load.
地址 Daejeon KR