Phase change memory element

摘要

A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.

主权项

1. A phase-change memory, comprising:
a bottom electrode; a first electrically-isolated conductor located above the bottom electrode; a second electrically-isolated conductor located above the first electrically-isolated conductor; a top electrode located above the second electrically-isolated conductor; and a phase-change material that contacts at least one surface of each of the bottom electrode, the first electrically-isolated conductor, the second electrically-isolated conductor, and the top electrode.