Semiconductor device,申请号US201213665376-传众专利搜索

发明名称	Semiconductor device
摘要	A first dual-gate electrode includes a gate electrode located on a first active region and having a first silicon film of a first conductivity type and a gate electrode located on a second active region and having a first silicon film of a second conductivity type. A second dual-gate electrode includes a gate electrode located on a third active region and having a second silicon film of the first conductivity type and a gate electrode located on a fourth active region and having a second silicon film of the second conductivity type. At least a portion of the first silicon film of the first conductivity type has a first-conductivity-type impurity concentration higher than that of a portion of the second silicon film of the first conductivity type located on the third active region.
申请公布号	US8884373(B2)	申请公布日期	2014.11.11
申请号	US201213665376	申请日期	2012.10.31
申请人	Panasonic Corporation	发明人	Sato Yoshihiro;Arai Hideyuki;Yamada Takayuki
分类号	H01L27/092;H01L21/8238;H01L21/768;H01L27/11;H01L27/105;H01L21/285	主分类号	H01L27/092
代理机构	McDermott Will & Emery LLP	代理人	McDermott Will & Emery LLP
主权项	1. A semiconductor device, comprising: a first dual-gate electrode; and a second dual-gate electrode being separated from the first dual-gate electrode, wherein the first dual-gate electrode includes a first gate electrode located on a first active region and having a first silicon film of a first conductivity type and a second gate electrode located on a second active region and having a first silicon film of a second conductivity type, the second dual-gate electrode includes a third gate electrode located on a third active region and having a second silicon film of the first conductivity type and a fourth gate electrode located on a fourth active region and having a second silicon film of the second conductivity type, the first active region and the second active region are isolated from each other with an isolation region interposed therebetween, the first gate electrode and the second gate electrode are connected to each other on the isolation region, and at least a portion of the first silicon film of the first conductivity type has a first-conductivity-type impurity concentration higher than that of a portion of the second silicon film of the first conductivity type located on the third active region.
地址	Osaka JP