System and method for integrated circuits with cylindrical gate structures

摘要

A system and method for integrated circuits with surrounding gate structures are disclosed. The integrated circuits system includes a transistor having a gate all around cylindrical (GAAC) nanowire channel with an interposed dielectric layer. The cylindrical nanowire channel being in a middle section of a semiconductor wire pattern connects the source and drain region positioned at the two opposite end sections of the same wire pattern. A method is provided for manufacturing the integrate circuits system with a GAAC transistor including forming an SOI layer wire pattern on the buried oxide layer of an SOI wafer; forming a cavity underneath the middle section of the wire pattern and shaping the middle section to cylindrically shaped channel; forming a gate electrode surrounding the cylindrical channel region with an interposed gate dielectric layer, the gate electrode being positioned on the buried oxide layer vertically towards the wire pattern; forming the source/drain regions at the two opposite end sections of the wire pattern on either sides of the gate electrode and channel.

主权项

1. A semiconductor device comprising:
a substrate; a first insulation layer overlaying the substrate; an elongated semiconductor region overlying the first insulation layer along a first direction, the elongated semiconductor region including a first end section, a middle section, and a second end section; a source region being within the first end section; a drain region being within the second end section; a channel region being within the middle section, the channel region connecting the source region and the drain region, the channel region, the source region, and the drain region being characterized by a substantially cylindrical shape having a radius and a length, the source region and the drain region overlaying an undercut structure formed by a portion of the first insulation layer, the undercut structure having a width less than a width of the cylindrical shape, the undercut structure being absent underneath the channel region; a second insulation layer surrounding the cylindrical channel region; and a gate electrode overlaying the second insulation layer all around the channel region and overlaying the first insulation layer along a second direction, the second direction being substantially perpendicular to the first direction, wherein the channel region comprises a first dopant and the source/drain regions comprise a second dopant, the first dopant being characterized by a first polarity, the second dopant being characterized by a second polarity, the first polarity being opposite from the second polarity.