发明名称 |
High electron mobility transistor structure with improved breakdown voltage performance |
摘要 |
A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided. |
申请公布号 |
US8884308(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201213650610 |
申请日期 |
2012.10.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Ju;Hsiung Chih-Wen;Yao Fu-Wei;Hsu Chun-Wei;Wong King-Yuen;Yu Jiun-Lei Jerry;Yang Fu-Chih |
分类号 |
H01L29/66;H01L29/20;H01L29/778;H01L29/16;H01L21/02 |
主分类号 |
H01L29/66 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A high electron mobility transistor (HEMT) comprising:
a silicon substrate; an unintentionally doped gallium nitride (UID GaN) layer over the substrate; a donor-supply layer over the UID GaN layer; a gate structure, a drain, and a source over the donor-supply layer, said gate structure disposed between the drain and the source; and a dielectric layer over the donor-supply layer between the gate structure and the drain, the dielectric layer having one or more first portions in the donor-supply layer and a second portion over the one or more first portions and the donor-supply layer, wherein at least one of the one or more first portions is proximate to the gate, and a thickness of a portion of the donor-supply layer under the one or more first portions of the dielectric layer is at least 40% of a thickness of a portion of the donor-supply layer directly under the second portion of the dielectric layer. |
地址 |
TW |