Semiconductor device having embedded strain-inducing pattern and method of forming the same

摘要

A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets.

主权项

1. A semiconductor device, comprising:
an active region formed in a substrate and having an upper surface, a first side surface, a second side surface opposite the first side surface, and a third side surface in contact with the first and second side surfaces; a gate electrode covering at least one of the upper surface, the first side surface, and the second side surface; and a strain-inducing pattern in contact with the third side surface of the active region, wherein the third surface of the active region includes two or more planes of which a first plane forms an acute angle with respect to the first side surface, and a second plane forms an acute angle with respect to the second side surface.