Semiconductor device

摘要

This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion.

主权项

1. A semiconductor device comprising a plurality of capacitors, each of the capacitors comprising:
a cylindrical lower electrode having a top open edge, the cylindrical lower electrode being formed over a substrate, an upper electrode, a dielectric film between the cylindrical lower electrode and the upper electrode, a plate support extending over the substrate in a plate shape, the plate support being contacted on a side surface of the cylindrical lower electrodes at a contacting portion, and links to support the cylindrical lower electrodes, and a pore portion provided in the plate support in a location separate from where the cylindrical lower electrode is disposed in plane view, a part of an outer circumference of the cylindrical lower electrodes being in contact with the pore portion of the plate support in plane view, wherein a topmost open edge of the cylindrical lower electrode is located at an upper position at a top surface of the plate support, and the cylindrical lower electrode has an extending cylindrical portion above a top surface of the plate support.