| 发明名称 |
Semiconductor structure |
| 摘要 |
A semiconductor structure includes a gate structure, an epitaxial layer and a carbon-containing silicon germanium cap layer. The gate structure is located on a substrate. The epitaxial layer is located in the substrate beside the gate structure. The carbon-containing silicon germanium cap layer is located on the epitaxial layer. Otherwise, semiconductor processes for forming said semiconductor structure are also provided. |
| 申请公布号 |
US8884346(B2) |
申请公布日期 |
2014.11.11 |
| 申请号 |
US201414156442 |
申请日期 |
2014.01.15 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Liao Chin-I;Chien Chin-Cheng |
| 分类号 |
H01L29/786;H01L29/78;H01L21/285;H01L29/66;H01L21/265 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor structure, comprising:
a gate structure located on a substrate; an epitaxial layer located in the substrate beside the gate structure; and a carbon-containing silicon germanium cap layer located on the epitaxial layer, wherein the carbon-containing silicon germanium cap layer is higher than a top surface of the substrate, and the distribution of the carbon content of the carbon-containing silicon germanium cap layer has a gradient decreasing from top to bottom. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
