SEMICONDUCTOR DEVICE HAVING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device having a contact plug and a manufacturing method thereof. The semiconductor device with a contact plug comprises a gate electrode on a substrate; an interlayer insulating film on the substrate; a contact hole which penetrates the interlayer insulating film and exposes the substrate adjacent to the gate electrode to the outside; a contact plug which is electrically connected to the substrate under the contact hole and has a top surface recessed from the top surface of the interlayer insulating film as much as a certain depth; a spacer which covers the inner side wall of the contact hole on the contact plug and exposes a portion of the top surface of the contact plug to the outside; a first conductive line which is formed on the spacer and is electrically connected to the top surface of the contact plug; and a second conductive line which is adjacent to the first conductive line on the interlayer insulating film.