| 发明名称 | Amorphous oxide semiconductor material, field-effect transistor, and display device | ||
| 摘要 | There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b−3.2 and c>−5b+8 and 1≦c≦2. | ||
| 申请公布号 | US8884272(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201012853338 | 申请日期 | 2010.08.10 |
| 申请人 | FUJIFILM Corporation | 发明人 | Hama Takeshi;Suzuki Masayuki;Tanaka Atsushi;Mochizuki Fumihiko |
| 分类号 | H01L29/08;H01L29/786;H01L27/32 | 主分类号 | H01L29/08 |
| 代理机构 | SOLARIS Intellectual Property Group, PLLC | 代理人 | SOLARIS Intellectual Property Group, PLLC |
| 主权项 | 1. An amorphous oxide semiconductor material comprising an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and 1.25≦b≦1.5 and c <4b−3.2 and c>−5b+8 and 1≦c≦2, and wherein an optical band gap of the amorphous oxide semiconductor material is equal to or greater than 3.85 eV. | ||
| 地址 | Tokyo JP | ||