| 发明名称 | Variable resistance memory device | ||
| 摘要 | A variable resistance memory device includes: a pair of first electrodes and a second electrode interposed between the pair of first electrodes; a first variable resistance material layer interposed between one of the first electrodes and the second electrode; and a second variable resistance material layer interposed between the other of the first electrodes and the second electrode, wherein the pair of first electrodes are electrically connected to each other, and a first set voltage and a first reset voltage of the first variable resistance material layer are different from a second set voltage and a second reset voltage of the second variable resistance material layer, respectively. | ||
| 申请公布号 | US8884264(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201313736581 | 申请日期 | 2013.01.08 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Seung-Hwan |
| 分类号 | H01L25/04;H01L45/00;H01L27/24 | 主分类号 | H01L25/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A variable resistance memory device comprising: a pair of first electrodes and a second electrode interposed between the pair of first electrodes; a first variable resistance material layer interposed between one of the first electrodes and the second electrode; and a second variable resistance material layer interposed between the other of the first electrodes and the second electrode, wherein the pair of first electrodes are electrically connected to each other, and a first set voltage and a first reset voltage of the first variable resistance material layer are different from a second set voltage and a second reset voltage of the second variable resistance material layer, respectively. | ||
| 地址 | Gyeonggi-do KR | ||