发明名称 Thermoelectric skutterudite compositions and methods for producing the same
摘要 Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.
申请公布号 US8883047(B2) 申请公布日期 2014.11.11
申请号 US200912990268 申请日期 2009.04.30
申请人 Massachusetts Institute of Technology;Trustees of Boston College 发明人 Ren Zhifeng;Yang Jian;Yan Xiao;He Qinyu;Chen Gang;Hao Qing
分类号 H01L29/12;H01B1/02;H01L35/34;H01L35/12;C22C1/04;B22F1/00;B22F3/00;C22C1/00;C22C5/00;B22F9/00;B22F1/02;C22C1/05;H01L35/18;B82Y30/00;C01G49/00;C01G51/00;C01G53/00;H01L35/26 主分类号 H01L29/12
代理机构 Nutter McClennen & Fish LLP 代理人 Nutter McClennen & Fish LLP
主权项 1. A method of fabricating an enhanced thermoelectric material comprising: providing at least one starting material which comprises at least one skutterudite-based starting material; generating a plurality of nanoparticles having an average particle size less than about 500 nm from the at least one skutterudite-based starting material; and consolidating the nanoparticles under pressure in a range from about 10 MPa to about 300 MPa at an elevated temperature to form a densified material, the densified material comprising a plurality of grains, each of the plurality of grains exhibiting a skutterudite-based structure, and the densified material exhibits a ZT value greater than about 0.8, wherein the densified material exhibits a higher ZT value at least at one temperature relative to at least one of the skutterudite-based starting materials.
地址 Cambridge MA US