发明名称 |
Method for forming pattern |
摘要 |
A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution.
—O—R1 (i) |
申请公布号 |
US8883023(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201213630207 |
申请日期 |
2012.09.28 |
申请人 |
JSR Corporation |
发明人 |
Wakamatsu Goji;Namai Hayato;Aoki Syun |
分类号 |
C03C15/00;G03F7/00;B44C1/22;H01L21/00;G03F7/09 |
主分类号 |
C03C15/00 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for forming a pattern comprising the steps in the following order of:
providing a composition to form a resist underlayer film on an upper face side of a substrate to be processed, the composition containing a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound,
—O—R1 (i)wherein R1 represents a group that generates an acidic functional group by an action of heat or an acid;
forming a resist pattern on an upper face side of the resist underlayer film; etching the resist underlayer film and the substrate using the resist pattern as a mask to form the pattern on the substrate; and removing the etched resist underlayer film from the substrate with a basic solution, the method further comprising heating an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of heat, or generating an acid in an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of an acid, so that the acidic functional group is generated prior to removing the etched resist underlayer film. |
地址 |
Tokyo JP |