发明名称 Method for forming pattern
摘要 A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution. —O—R1  (i)
申请公布号 US8883023(B2) 申请公布日期 2014.11.11
申请号 US201213630207 申请日期 2012.09.28
申请人 JSR Corporation 发明人 Wakamatsu Goji;Namai Hayato;Aoki Syun
分类号 C03C15/00;G03F7/00;B44C1/22;H01L21/00;G03F7/09 主分类号 C03C15/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for forming a pattern comprising the steps in the following order of: providing a composition to form a resist underlayer film on an upper face side of a substrate to be processed, the composition containing a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound, —O—R1  (i)wherein R1 represents a group that generates an acidic functional group by an action of heat or an acid; forming a resist pattern on an upper face side of the resist underlayer film; etching the resist underlayer film and the substrate using the resist pattern as a mask to form the pattern on the substrate; and removing the etched resist underlayer film from the substrate with a basic solution, the method further comprising heating an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of heat, or generating an acid in an entirety of the resist underlayer film when R1 represents a group that generates an acidic functional group by an action of an acid, so that the acidic functional group is generated prior to removing the etched resist underlayer film.
地址 Tokyo JP