发明名称 Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein
摘要 Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the surface of the layer is selectively oxidized, at least in part, to form an oxidized portion. The oxidized portion is then removed, at least partially, to facilitate achieving greater planarity. The protruding portions may optionally be formed by selectively disposing conductive material over the conductive structure, when that the conductive structure is initially recessed below the surface of the layer. A further embodiment includes selectively oxidizing a portion of the conductive structure below the surface of the layer, removing at least some of the oxidized portion so that an upper surface of the conductive structure is below the upper surface of the layer, and planarizing the upper surface of the layer to the upper surface of the conductive structure.
申请公布号 US8883020(B2) 申请公布日期 2014.11.11
申请号 US201313754170 申请日期 2013.01.30
申请人 Globalfoundries, Inc. 发明人 Zhang Xunyuan;Cai Xiuyu
分类号 B44C1/22;H05K3/00 主分类号 B44C1/22
代理机构 Heslin Rothenberg Farley & Mesiti P.C. 代理人 Claudio, Esq. Gianluca Di;Hulihan, Esq. Matthew M.;Heslin Rothenberg Farley & Mesiti P.C.
主权项 1. A method comprising: providing a conductive structure for an electronic circuit, the providing comprising: controllably processing a protruding portion of the conductive structure protruding above a surface of a layer within which the conductive structure at least partially resides, the controllably processing comprising selectively oxidizing, at least in part, the protruding portion of the conductive structure down to a depth below a surface of the conductive structure, to form an oxidized portion of the conductive structure, wherein the selectively oxidizing is performed by a glancing angle oxidation process; andsubsequent to the controllably processing, removing, at least partially, the oxidized portion of the conductive structure, wherein the removing removes at least a part of the protruding portion of the conductive structure, which facilitates achieving greater planarity between the surface of the layer and an upper surface of the conductive structure.
地址 Santa Clara CA US