发明名称 |
Ultrasound probe |
摘要 |
The present invention relates to an ultrasound therapy system using high-intensity focused ultrasound. The present invention improves ultrasound and heat release characteristics and provides an ultrasound probe which easily performs manufacturing and maintenance processes. According to the present invention, a housing is recessed on the inward side around the upper-part edge. A plurality of mounting holes are uniformly formed from the outside at a constant radius to the edge in the center of the upper part. And a plurality of probe units are respectively installed to the plurality of mounting holes to form a sphere in the upper part of the housing wherein a first connection pin is protruded to the lower part of the housing in the lower part of a copper connection bar and a rear block, a piezoelectric wafer, and an acoustic matching layer are sequentially stacked on the upper part of the connection bar. |
申请公布号 |
US8881592(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201013521997 |
申请日期 |
2010.07.15 |
申请人 |
Humanscan Co., Ltd. |
发明人 |
Rhim Sung Min;Jung Ho;Kim Do Kyeong |
分类号 |
G01N29/00;G01N29/24;A61N7/02;B06B1/06;A61N7/00 |
主分类号 |
G01N29/00 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. An ultrasound probe, comprising:
a housing recessed inward from edges at an upper part thereof and having a plurality of mounting holes formed apart from a center and to the edges; and a plurality of probe units installed in the mounting holes, respectively, so that a spherical surface for a spherical focusing is formed at the upper part of the housing, wherein each of the probe units includes:
a connection bar having electric and thermal conductivity;a first connection pin formed on a lower surface of the connection bar and protruded from a lower part of the housing through the corresponding mounting hole of the housing;a rear block formed on an upper surface of the connection bar and having an inclined plane for forming the spherical surface;a piezoelectric wafer formed on the inclined plane of the rear block; andat least one acoustic matching layer formed on an upper surface of the piezoelectric wafer. |
地址 |
Ansan-Si, Gyeonggi-Do KR |