发明名称 Ultrasound probe
摘要 The present invention relates to an ultrasound therapy system using high-intensity focused ultrasound. The present invention improves ultrasound and heat release characteristics and provides an ultrasound probe which easily performs manufacturing and maintenance processes. According to the present invention, a housing is recessed on the inward side around the upper-part edge. A plurality of mounting holes are uniformly formed from the outside at a constant radius to the edge in the center of the upper part. And a plurality of probe units are respectively installed to the plurality of mounting holes to form a sphere in the upper part of the housing wherein a first connection pin is protruded to the lower part of the housing in the lower part of a copper connection bar and a rear block, a piezoelectric wafer, and an acoustic matching layer are sequentially stacked on the upper part of the connection bar.
申请公布号 US8881592(B2) 申请公布日期 2014.11.11
申请号 US201013521997 申请日期 2010.07.15
申请人 Humanscan Co., Ltd. 发明人 Rhim Sung Min;Jung Ho;Kim Do Kyeong
分类号 G01N29/00;G01N29/24;A61N7/02;B06B1/06;A61N7/00 主分类号 G01N29/00
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. An ultrasound probe, comprising: a housing recessed inward from edges at an upper part thereof and having a plurality of mounting holes formed apart from a center and to the edges; and a plurality of probe units installed in the mounting holes, respectively, so that a spherical surface for a spherical focusing is formed at the upper part of the housing, wherein each of the probe units includes: a connection bar having electric and thermal conductivity;a first connection pin formed on a lower surface of the connection bar and protruded from a lower part of the housing through the corresponding mounting hole of the housing;a rear block formed on an upper surface of the connection bar and having an inclined plane for forming the spherical surface;a piezoelectric wafer formed on the inclined plane of the rear block; andat least one acoustic matching layer formed on an upper surface of the piezoelectric wafer.
地址 Ansan-Si, Gyeonggi-Do KR