发明名称 Flash memory and associated programming method
摘要 A flash memory includes a program voltage generator, plural memory units, a current limiter, and a multi-bit program control unit. The program voltage generator is used for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle. The plural memory units output plural drain currents and plural data line voltages to plural data lines. The current limiter is used for receiving a reference current and a reference voltage, thereby controlling the plural drain currents. During the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit. During the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage.
申请公布号 US8885405(B2) 申请公布日期 2014.11.11
申请号 US201313755045 申请日期 2013.01.31
申请人 eMemory Technology Inc. 发明人 Chang Che-Wei;Chang Chia-Fu;Tsai Yu-Hsiung;Hsu Chia-Jung
分类号 G11C16/04;G11C16/10 主分类号 G11C16/04
代理机构 WPAT, PC 代理人 WPAT, PC ;King Justin
主权项 1. A flash memory, comprising: a program voltage generator for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle; a plurality of memory units for receiving the constant program voltage or the dynamically-adjustable program voltage, and outputting plural drain currents and plural data line voltages to plural data lines; a current limiter connected to the plural data lines for receiving a reference current and a reference voltage, thereby controlling the plural drain currents; and a multi-bit program control unit connected to the plural data lines, wherein during the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit, wherein during the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage.
地址 Hsin-Chu TW
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