发明名称 |
Flash memory and associated programming method |
摘要 |
A flash memory includes a program voltage generator, plural memory units, a current limiter, and a multi-bit program control unit. The program voltage generator is used for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle. The plural memory units output plural drain currents and plural data line voltages to plural data lines. The current limiter is used for receiving a reference current and a reference voltage, thereby controlling the plural drain currents. During the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit. During the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage. |
申请公布号 |
US8885405(B2) |
申请公布日期 |
2014.11.11 |
申请号 |
US201313755045 |
申请日期 |
2013.01.31 |
申请人 |
eMemory Technology Inc. |
发明人 |
Chang Che-Wei;Chang Chia-Fu;Tsai Yu-Hsiung;Hsu Chia-Jung |
分类号 |
G11C16/04;G11C16/10 |
主分类号 |
G11C16/04 |
代理机构 |
WPAT, PC |
代理人 |
WPAT, PC ;King Justin |
主权项 |
1. A flash memory, comprising:
a program voltage generator for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle; a plurality of memory units for receiving the constant program voltage or the dynamically-adjustable program voltage, and outputting plural drain currents and plural data line voltages to plural data lines; a current limiter connected to the plural data lines for receiving a reference current and a reference voltage, thereby controlling the plural drain currents; and a multi-bit program control unit connected to the plural data lines, wherein during the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit, wherein during the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage. |
地址 |
Hsin-Chu TW |