MRAM device and fabrication method thereof

摘要

A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.

主权项

1. A magnetoresistive random access memory (MRAM) comprising:
a pinned magnetic layer; a barrier layer adjacent the pinned magnetic layer; and a giant magnetoresistance (GMR) structure adjacent the barrier layer, the GMR structure comprising a first magnetic layer, a second magnetic layer, and a conductive layer interposed between the first magnetic layer and the second magnetic layer, wherein the pinned magnetic layer, the barrier layer, and the GMR structure are laterally over a dielectric layer, wherein the MRAM is capable of reading a resistance state between the second magnetic layer and the pinned layer.