| 摘要 |
<p>A method and system for increasing the lifespan of a flash memory device by selectively erasing sub-blocks of a memory block. Each physical memory block of the flash memory device is dividable into at least two logical sub-block, where each of the at least two logical sub-blocks is erasable. Therefore, only the data of the logical sub-block is erased and reprogrammed while unmodified data in the other logical sub-block avoids unnecessary program/erase cycles. The logical sub-blocks to be erased are dynamically configurable in size and location within the block. A wear leveling algorithm is used for distributing data throughout the physical and logical sub-blocks of the memory array to maximize the lifespan of the physical block during programming and data modification operations.</p> |
